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CYStech Electronics Corp.
Low VCE(SAT) PNP Epitaxial Planar Transistor
Spec. No. : C816A3-H Issued Date : 2003.07.02
Revised Date : Page No. : 1/4
BTB1426A3
Description
The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. * High DC current gain and excellent hFE linearity. * Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA).
Features
Symbol
BTB1426A3
Outline
TO-92
BBase CCollector EEmitter
ECB
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note : Single pulse, Pw10ms, Duty Cycle2%.
Symbol VCBO VCEO VEBO IC ICP Pd RJA Tj Tstg
Limits -20 -20 -6 -3 -5 (Note ) 750 167 150 -55~+150
Unit V V V A mW C/W C C
BTB1426A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -20 -6 120 Typ. 240 35 Max. -0.1 -0.1 -0.5 820 Unit V V V A A V MHz pF
Spec. No. : C816A3-H Issued Date : 2003.07.02
Revised Date : Page No. : 2/4
Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-20V VEB=-5V IC=-2A, IB=-0.1A VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE
Rank Range Q 120~270 R 180~390 S 270~560 T 390~820
BTB1426A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000 VCE=1V Saturation Voltage---(mV) Current Gain---HFE 100 1000
Spec. No. : C816A3-H Issued Date : 2003.07.02
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
VCE(SAT)@IC=40IB
10
100 1 10 100 1000 10000 Collector Current---IC(mA)
1 1 10 100 1000 10000 Collector Current---IC(mA)
ON Voltage vs Collector Current 1000 Power Dissipation---PD(mW) 800 700 600 500 400 300 200 100 0 0.1 1 10 100 1000 10000 0
Power Derating Curve
ON Voltage---(mV)
VBE(ON)@VCE=1V
100 Collector Current IC---(mA)
50
100
150
200
Ambient Temperature---TA()
BTB1426A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
2
Marking:
Spec. No. : C816A3-H Issued Date : 2003.07.02
Revised Date : Page No. : 4/4
A B
1 2 3
B1426
3
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1426A3
CYStek Product Specification

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